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ISSCC 2012Session 15 · mm-WAVE & THz TECHNIQUESmm-Wave0.13µm SiGe BiCMOS

A 9% Power Efficiency 121-to-137GHz PhaseControlled Push-Push Frequency Quadrupler in 0.13µm SiGe BiCMOS

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

提出了一种基于相位控制的push-push四倍频器,在121-137GHz频段实现9%的功率效率,可用于高频信号源生成。解决了高数据率短距离通信和成像系统中对纯净稳定信号源的需求。

💡 主要创新点

核心指标
9% power efficiency
工艺节点
0.13µm SiGe BiCMOS
重要性
发表年份
ISSCC 2012

🏷 关键词

频率四倍频器push-push毫米波SiGe BiCMOS

📄 原文摘要

Institute of Microelectronics, Singapore, Singapore 3 MicroArray Technologies, Chengdu, China 1 2 High-data-rate short-range communication and image systems beyond 100GHz impose crucial requirements on signal sources, demanding superior purity and stability. Using frequency multipliers with high efficiency and multiplication factor to generate the Nth harmonic signal that is phase-locked by a PLL at the fundamental frequency provides an alternative solution. The desired signal in an active frequency multiplier can be generated using Class B/C amplifiers, where a half-wave signal containing all harmonics is first created and then filtered to remove the undesired harmonic components [1]. Another approach is to apply the same signal to both the IF and RF ports of a mixer to construct a doubler followed by cascading to form the quadrupler [3]. The linear superposition (LS) technique that superimposes four phase-shifted half-waves of 0°, 90°, 180°, and

👥 作者与机构

Yong Wang1,2, Wang Ling Goh1, Yong-Zhong Xiong2,3

Nanyang Technological University, Singapore, Singapore

分类:mm-Wave · 年份:ISSCC 2012