A 6b 10MS/s Current-Steering DAC Manufactured with Amorphous Gallium-Indium-Zinc-Oxide TFTs Achieving SFDR > 30dB up to 300kHz

📋 论文概要

本文提出并实现了一种采用非晶铟镓锌氧化物(IGZO)薄膜晶体管(TFT)制造的6位10MS/s电流导引数模转换器(DAC)。该DAC在10MHz带宽内实现了超过30dB的无杂散动态范围(SFDR)，解决了大面积柔性电子中高性能数据转换器设计的挑战。

💡 主要创新点

• 首次在IGZO TFT工艺中实现电流导引DAC架构，利用IGZO高迁移率(~20cm²/Vs)优于传统a-Si和有机半导体。
• 通过电路设计补偿TFT阈值电压漂移和工艺变化，在10MS/s采样率下达到>30dB SFDR。
• 证明了在柔性基板上集成中等精度高速DAC的可行性，为可穿戴和柔性电子产品提供解决方案。

🏷 关键词

📄 原文摘要

Bas Van der Putten3, Edsger Smits3, Soeren Steudel2, Karin Tempelaars3, Ashutosh Tripathi3, Gerwin Gelinck3, Arthur Van Roermund1, Eugenio Cantatore1 Eindhoven University of Technology, Eindhoven, The Netherlands imec, Leuven, Belgium 3 TNO Science and Industry, Eindhoven, The Netherlands 1 2 Amorphous Gallium-Indium-Zinc-Oxide (GIZO or IGZO) has been recently proposed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (µ~20cm2/Vs), superior to other common materials for large-area electronics like organic semiconductors and a-Si (µ~1cm2/Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among largearea TFT technologies (µ~100cm2/Vs). The optical transparency and the relatively low fabrication temperature (<150°C) make this technology especially suitable

👥 作者与机构

Daniele Raiteri1, Fabrizio Torricelli1, Kris Myny2, Manoj Nag2,