A Clip-and-Restore Technique for Phase Desensitization in a 1.2V 65nm CMOS Oscillator for Cellular Mobile and Base Stations

📋 论文概要

该论文提出了一种用于相位去敏化的限幅与恢复技术，在1.2V 65nm CMOS振荡器中实现了满足GSM和DCS基站及移动台严格相位噪声要求的性能。解决了传统全单片VCO在体CMOS工艺中难以满足蜂窝移动通信系统相位噪声指标的问题。

💡 主要创新点

• 提出限幅与恢复技术，通过限制振荡器输出幅度并恢复信号完整性，有效降低相位噪声对电源和衬底噪声的敏感度。
• 在65nm CMOS工艺中实现了1.2V低电压工作，同时满足GSM-900-BTS和DCS-1800-BTS的RX相位噪声要求以及GSM移动台的TX相位噪声要求。

🏷 关键词

📄 原文摘要

Base-station (BTS) RX oscillator phase noise requirements between 600kHz and 3MHz are difficult to satisfy using a fully monolithic VCO fabricated in bulkCMOS technology. The GSM-900-BTS and the DCS-1800-BTS RX specifications at 800kHz of -147dBc/Hz and -138dBc/Hz, respectively, are considered the most difficult to meet. In GSM mobile stations (MS), the transmit and receive bands are 20MHz apart, which sets a stringent TX phase noise requirement of -162dBc/Hz at 20MHz offset [1]. A VCO satisfying this inadvertently meets the relatively relaxed RX specification. Aggressive phase noise specifications are typically addressed by increasing oscillator power consumption. However, the rate of improvement in phase noise versus power consumption reduces as the MOS devices get driven hard from saturation to triode. To minimize the power consumption/phase noise trade-off, mechanisms affecting the conversion of circuit noise to phase noise must also

👥 作者与机构

Akshay Visweswaran, R. Bogdan Staszewski, John R. Long

Delft University of Technology, Delft, The Netherlands