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ISSCC 2012Session 20 · RF FREQUENCY GENERATIONRF & Wireless55nm CMOS

A 6.7-to-9.2GHz 55nm CMOS Hybrid Class-B/Class-C Cellular TX VCO

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📋 论文概要

本文提出一种工作在6.7-9.2GHz的55nm CMOS混合Class-B/Class-C VCO,满足蜂窝发射机对相位噪声的严格要求,特别是GSM和WCDMA标准。通过混合两种工作模式,实现了宽带调谐和低相位噪声。

💡 主要创新点

工艺节点
55nm CMOS
重要性
发表年份
ISSCC 2012

🏷 关键词

VCO混合Class-B/Class-C蜂窝发射机相位噪声宽带调谐

📄 原文摘要

Lund University, Lund, Sweden 3 ST-Ericsson, Lund, Sweden 1 2 The design of very-wide-band CMOS voltage-controlled oscillators (VCOs) compliant with the phase-noise specifications of cellular transmitters is non-trivial, especially considering the GSM standard, where the phase noise exhibited by the local oscillator (LO, generated by the cascade of VCO, buffers, and usually frequency dividers) should be several dB below -162dBc/Hz at 20MHz frequency offset from the carrier. As shown in [1], challenging phase-noise requirements can embrace the WCDMA transmitter as well (e.g. -166dBc/Hz at 45MHz frequency offset for WCDMA band VIII), if cheap antenna duplexers are chosen to minimize costs. In such scenarios, and particularly in the very relevant case of WCDMA transmitting at moderate power levels, the LO power efficiency is still one of the limiting factors for a long-lasting battery life, motivating the ongoing

👥 作者与机构

Luca Fanori1,2, Antonio Liscidini1, Pietro Andreani2,3

University of Pavia, Pavia, Italy

分类:RF & Wireless · 年份:ISSCC 2012