A 0.7e-rms-Temporal-Readout-Noise CMOS Image Sensor for Low-Light-Level Imaging

📋 论文概要

该论文提出了一种用于低光照成像的CMOS图像传感器，通过采用高增益列级放大器和相关多次采样技术，实现了0.7e-rms的时域读出噪声，解决了传统像素级放大器导致像素均匀性差的问题。

💡 主要创新点

• 采用高增益列级放大器替代像素级放大器，在降低读出噪声的同时保持了像素均匀性。
• 结合相关多次采样技术进一步抑制时域读出噪声，达到亚电子噪声水平。

🏷 关键词

📄 原文摘要

Belgium 4 Harvest Imaging, Bree, Belgium 1 2 For low-light-level imaging, the performance of a CMOS image sensor (CIS) is usually limited by the temporal readout noise (TRN) generated from its analog readout circuit chain. Although a sub-electron TRN level can be achieved with a high-gain pixel-level amplifier, the pixel uniformity is highly impaired up to a few percent by its open-loop amplifier structure [1]. The TRN can be suppressed without this penalty by employing either a high-gain column-level amplifier [2] or a correlated multiple sampling (CMS) technique [3-5]. However, only 1-to-2 electron TRN level has been reported with the individual use of these approaches [2-5], and the low-frequency noise of the in-pixel source follower i.e. 1/f and

👥 作者与机构

Yue Chen1, Yang Xu1, Youngcheol Chae1, Adri Mierop2, Xinyang Wang3,

Albert Theuwissen1,4 Delft University of Technology, Delft, The Netherlands Teledyne DALSA Semiconductors, Eindhoven, The Netherlands 3 CMOSIS NV, Antwerp,