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ISSCC 2012Session 22 · IMAGE SENSORSImage Sensors0.11µm CMOS

A 1920×1080 3.65µm-Pixel 2D/3D Image Sensor with Split and Binning Pixel Structure in 0.11µm Standard CMOS

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📋 论文概要

本文提出一种在0.11µm标准CMOS工艺中实现的1920×1080分辨率、3.65µm像素尺寸的2D/3D图像传感器,采用分裂和合并像素结构,解决了单芯片实现2D彩色成像与ToF深度成像的挑战。

💡 主要创新点

工艺节点
0.11µm CMOS
重要性
发表年份
ISSCC 2012

🏷 关键词

2D/3D图像传感器分像素结构飞行时间深度标准CMOS高分辨率

📄 原文摘要

very crucial in various applications such as robotics, automotive, augmented reality, and interactive gaming, because it enables electronic devices to recognize and track target objects without complicated post-processing. Numerous color image sensors have been developed, pushing small-size and high-sensitivity pixels [1,2]; likewise, time-of-flight (ToF) depth imagers, where pixels directly provide their own depth information, have been presented based on singlephoton avalanche diodes (SPADs) [3] and photo-mixing devices [4]. However, it is still challenging to implement a single image sensor that can simultaneously acquire color and depth images. This is because the principles of operation for acquisition of both types of images are totally different, resulting in a difference

👥 作者与机构

Seong-Jin Kim, Byongmin Kang, James D. K. Kim, Keechang Lee,

Chang-Yeong Kim, Kinam Kim Samsung Advanced Institute of Technology, Yongin, Korea Real-time capturing of a color image and depth map from an arbitrary scene is

分类:Image Sensors · 年份:ISSCC 2012