A 19nm 112.8mm2 64Gb Multi-Level Flash Memory with 400Mb/s/pin 1.8V Toggle Mode Interface

📋 论文概要

本文介绍了一款采用19nm工艺、芯片面积112.8mm²、容量为64Gb的多级闪存芯片。该芯片通过1.8V Toggle Mode接口实现了400Mb/s/pin的数据传输速率，解决了大容量NAND闪存的高速度读写需求。

💡 主要创新点

• 采用19nm工艺实现64Gb多级闪存，大幅提升存储密度
• 引入1.8V Toggle Mode接口，达到400Mb/s/pin的高速数据传输

🏷 关键词

📄 原文摘要

T. Shimizu1, T. Sugimoto1, T. Kobayashi1, K. Inuzuka1, N. Kanagawa1, Y. Kajitani1, T. Ogawa1, J. Nakai1, K. Iwasa1, M. Kojima1, T. Suzuki1, Y. Suzuki1, S. Sakai1, T. Fujimura1, Y. Utsunomiya1, T. Hashimoto1, M. Miakashi1, N. Kobayashi1, M. Inagaki1, Y. Matsumoto1, S. Inoue1, Y. Suzuki1, D. He1, Y. Honda1, J. Musha1, M. Nakagawa1, M. Honma1, N. Abiko1, M. Koyanagi1, M. Yoshihara1, K. Ino1, M. Noguchi1, T. Kamei2, Y. Kato2, S. Zaitsu2, H. Nasu2, T. Ariki2, H. Chibvongodze2, M. Watanabe2, H. Ding2, N. Ookuma2, R. Yamashita2, G. Liang2, G. Hemink2, F. Moogat2, C. Trinh2, M. Higashitani2, T. Pham2, K. Kanazawa1 Toshiba, Yokohama, Japan Sandisk, Milpitas, CA 1 2 NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market

👥 作者与机构

N. Shibata1, K. Kanda1, T. Hisada1, K. Isobe1, M. Sato1, Y. Shimizu1,