An 8Mb Multi-Layered Cross-Point ReRAM Macro with 443MB/s Write Throughput

📋 论文概要

本文提出了一款8Mb多层交叉点ReRAM宏单元，通过64位并行写入和17.2ns周期实现了443MB/s的写入吞吐量，解决了非易失性存储器在低电压下快速写入的需求，超越了闪存性能。

💡 主要创新点

• 采用多层交叉点结构，提高了存储密度和写入并行性。
• 实现了64位并行写入，在17.2ns周期内达到443MB/s的高写入吞吐量。
• 在低电压下实现快速写入操作，适用于高性能存储设备。

🏷 关键词

📄 原文摘要

Yoshikazu Katoh1, Kouhei Tanabe2, Toshihiro Nakamura2, Yoshihiko Sumimoto2, Naoki Yamada2, Nobuyuki Nakai2, Shoji Sakamoto2, Yukio Hayakawa1, Kiyotaka Tsuji1, Shinichi Yoneda1, Atsushi Himeno1, Ken-ichi Origasa2, Kazuhiko Shimakawa1, Takeshi Takagi1, Takumi Mikawa1, Kunitoshi Aono1 Panasonic, Moriguchi, Japan Panasonic, Nagaokakyo, Japan 1 2 Nonvolatile memories with fast write operation at low voltage are required as storage devices to exceed flash memory performance [1-3]. We develop an 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput (64b parallel write per 17.2ns cycle), which is almost twice as fast as existing methods, using the fast-switching performance of TaOx ReRAM [4] and the following three techniques to reduce the sneak current in bipolar type cross-point cell array structure in an 0.18µm process. First, memory cell and array technologies reduce the sneak current with a newly developed bidirectional diode as a memory cell select element for the first

👥 作者与机构

Akifumi Kawahara1, Ryotaro Azuma1, Yuuichirou Ikeda1, Ken Kawai1,