An 8Gb/s/pin 4pJ/b/pin Single-T-Line Dual (Base+RF) Band Simultaneous Bidirectional Mobile Memory I/O Interface with Inter-Channel Interference Suppression

📋 论文概要

本文提出了一种单线双频带（基带+射频）同时双向移动内存I/O接口，在单根传输线上实现8Gb/s/pin的数据速率和4pJ/b/pin的能效，解决了移动设备对高带宽和低功耗的需求。

💡 主要创新点

• 采用单线双频带（基带+射频）同时双向传输架构，无需额外线路即可实现双向通信，提升带宽利用率。
• 通过优化电路和信号处理技术，实现了4pJ/b/pin的超低功耗，满足移动设备能效要求。

🏷 关键词

📄 原文摘要

Morgantown, WV 3 TSMC, Hsinchu, Taiwan 1 2 The demand for higher power efficiency and bandwidth is increasing as mobile devices keep enhancing its graphic computing and media processing capabilities. Current memory interfaces with single-wire signaling operate at 5Gb/s/pin

👥 作者与机构

Yanghyo Kim1, Gyung-Su Byun2, Adrian Tang1, Chewn-Pu Jou3,

Hsieh-Hung Hsieh3, Glenn Reinman1, Jason Cong1, Mau-Chung Frank Chang1 University of California, Los Angeles, Los Angeles, CA West Virginia University,