A Wideband IM3 Cancellation Technique for CMOS Attenuators

📋 论文概要

该论文提出了一种用于CMOS衰减器的宽频带三阶交调（IM3）抵消技术，旨在提高衰减器的线性度和功率处理能力。通过设计新的电路结构，在宽频带范围内有效抑制IM3失真，改善了衰减器在大信号下的性能。

💡 主要创新点

• 提出了一种宽频带IM3抵消技术，能够在较宽的频率范围内有效抑制三阶交调失真。
• 该技术适用于CMOS衰减器，与传统的自适应自举体偏置等方法相比，实现了更好的线性度提升。

🏷 关键词

📄 原文摘要

are used to limit the incident power to the level that the receiver circuitry can handle without degrading the linearity; in the transmitter path stringent power control is also desirable. Although variable-gain amplifiers (VGAs) traditionally implement the gain-control block, attenuators based on FET transistors show superior performances on linearity, power handling capability and power consumption. Much effort [1-3] has been devoted to improving the linearity and power-handling capability of attenuators. Adaptive bootstrapped body biasing [1] is used in a cascaded-Π attenuator to suppress the body-related parasitic effects and improve P1dB. A Π attenuator with parallel branches designed for discrete attenuation steps achieving +23dBm IIP3 is shown in [2]. The stacked-FET technique

👥 作者与机构

Wei Cheng, Mark Oude Alink, Anne Johan Annema, Gerard Wienk, Bram Nauta

University of Twente, Enschede, The Netherlands In the receiver path and in spectrum analyzers, typically gain control blocks