A Fully Integrated Triple-Band CMOS Power Amplifier for WCDMA Mobile Handsets

📋 论文概要

该论文提出了一款全集成三频段CMOS功率放大器，用于WCDMA移动手机，解决了多频段RF部分尺寸和功耗大的问题。通过创新的电路设计和集成技术，实现了在三个频段上的高效功率放大。

💡 主要创新点

• 首次实现了全集成三频段CMOS功率放大器，无需外部匹配网络。
• 采用自适应偏置和动态电源控制技术，提高了不同频段下的效率和线性度。

🏷 关键词

📄 原文摘要

Tetsuro Tamura2, Shigeaki Kawai2, Masahiro Kudo2, Tomotoshi Murakami2, Hiroyuki Nakamoto1, Nobumasa Hasegawa2, Hideki Kano2, Nobuhiro Shimazui2, Akiko Mineyama3, Kazuaki Oishi1, Masashi Shima4, Naoyoshi Tamura4, Toshihide Suzuki3, Toshihiko Mori1, Kimitoshi Niratsuka2, Shinji Yamaura2 Fujitsu Laboratories, Kawasaki, Japan Fujitsu Semiconductor, Yokohama, Japan 3 Fujitsu Laboratories, Atsugi, Japan 4 Fujitsu Semiconductor, Mie, Japan 1 2 The recent rapid spread of smart-phone use has resulted in a strong demand for a multi-band RF part with reduced size and power consumption. In the creation of an ideal RF system-on-a-chip, the biggest challenge is to realize a fully integrated PA in CMOS. In conventional PAs in compound semiconductor technologies, face-up wire-bond assembly with off-chip matching components is typically used, but flip-chip packaging is more suitable for slim mobile phones in which

👥 作者与机构

Kouichi Kanda1, Yoichi Kawano2, Takao Sasaki2, Noriaki Shirai2,