⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文实现了一款32Gb ReRAM存储器件，采用2层堆叠架构和24nm工艺，芯片面积为130.7mm²，解决了高密度非易失性存储器的容量和集成度问题。
Jeffrey KoonYee Lee1, Gopinath Balakrishnan1, Gordon Yee1, Henry Zhang1, Alex Yap1, Jingwen Ouyang1, Takahiko Sasaki2, Sravanti Addepalli1, Ali Al-Shamma1, Chin-Yu Chen1, Mayank Gupta1, Greg Hilton1, Saurabh Joshi1, Achal Kathuria1, Vincent Lai1, Deep Masiwal1, Masahide Matsumoto1, Anurag Nigam1, Anil Pai1, Jayesh Pakhale1, Chang Hua Siau1, Xiaoxia Wu1, Ronald Yin1, Liping Peng1, Jang Yong Kang1, Sharon Huynh1, Huijuan Wang1, Nicolas Nagel3, Yoichiro Tanaka3, Masaaki Higashitani1, Tim Minvielle1, Chandu Gorla1, Takayuki Tsukamoto4, Takeshi Yamaguchi4, Mutsumi Okajima4, Takayuki Okamura4, Satoru Takase2, Takahiko Hara2, Hirofumi Inoue4, Luca Fasoli1, Mehrdad Mofidi1, Ritu Shrivastava1, Khandker Quader1 Sandisk, Milpitas, CA, 2Toshiba, Yokohama, Japan, 3Sandisk, Yokkaichi, Japan, Toshiba, Yokkaichi, Japan 1 unselected memory cells produce no leakage current along the selected path. The clamp transistor M1 isolates the GSELB loading to allow fast swing of node
Tz-Yi Liu1, Tian Hong Yan1, Roy Scheuerlein1, Yingchang Chen1,