⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种40nm嵌入式SG-MONOS闪存宏单元，专为汽车应用设计，实现了160MHz的随机读取速度和超过1000万次的编程/擦除循环耐久性，解决了汽车电子对高密度、高速随机访问和高可靠性的需求。
markets of Flash MCUs, microcontrollers with embedded flash memory (eFlash), have been steadily growing since the middle of 1990s. Especially, in automotive, Flash MCUs have become essential to realize the complicated realtime controls for higher fuel-efficiency, higher safety, and more connectivity. For this reason, high-density and high-speed random-read access are strongly required for eFlash. In addition, what characterizes the requirements for eFlash in automotive are secured operations and data reliability with the reliable program/erase (P/E) cycling under high temperature. Therefore, eFlash in automotive Flash MCUs needs the most advanced and reliable process and circuit technologies adaptable to harsh operating conditions.
Takashi Kono1, Takashi Ito1, Tamaki Tsuruda1, Takayuki Nishiyama1,
Tsutomu Nagasawa1, Tomoya Ogawa1, Yoshiyuki Kawashima2, Hideto Hidaka1, Tadaaki Yamauchi1 Renesas Electronics, Itami, Japan, Renesas Electronics, Hitachinaka, Japan 1 2 The