Filament Scaling Forming Technique and Level-Verify-Write Scheme with Endurance Over 107 Cycles in ReRAM

📋 论文概要

本文提出了一种细丝缩放成形技术和电平验证写入方案，用于提高ReRAM的耐久性，实现了超过10^7次循环的耐久性。该技术解决了ReRAM在嵌入式MCU和SoC应用中需要高耐久性的问题。

💡 主要创新点

• 提出细丝缩放成形技术，通过控制细丝尺寸改善ReRAM的耐久性
• 提出电平验证写入方案，结合验证和写入操作以延长存储器的使用寿命

🏷 关键词

📄 原文摘要

Ryotaro Azuma1, Yuhei Yoshimoto1, Kouhei Tanabe2, Zhiqiang Wei1, Takeki Ninomiya1, Koji Katayama1, Ryutaro Yasuhara1, Shunsaku Muraoka1, Atsushi Himeno1, Naoki Yoshikawa1, Hideaki Murase1, Kazuhiko Shimakawa1, Takeshi Takagi1, Takumi Mikawa1, Kunitoshi Aono1 Panasonic, Kyoto, Japan, Panasonic, Nagaokakyo, Japan 1 2 Resistive RAM (ReRAM) has been recently developed for applications that require higher speed and lower voltage than Flash memory is able to provide. One of the applications is micro-controller units (MCUs) or SoCs with several megabits of embedded ReRAM. Another is solid-state drives (SSDs) where a combination of higher-density ReRAM and NAND flash memory would achieve high-performance and high-reliability storage [1], suitable for server applications for future cloud computing. ReRAM is attractive for several reasons. First, it operates at high speed and low voltage. Second, it enables high density due to

👥 作者与机构

Akifumi Kawahara1, Ken Kawai1, Yuuichirou Ikeda1, Yoshikazu Katoh1,