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该论文回顾了光学光刻技术在集成电路制造中的发展历程,从投影扫描到193nm浸没式光刻机,并展望了下一代光刻技术,包括多重图案化等方法来继续缩小器件尺寸。
Optical lithography has been the key manufacturing technology for integratedcircuit production, enabling a million-fold reduction in average transistor length over 50 years. The development of projection scanners, step-andrepeat tools, and now, step-and-scan systems at higher numerical apertures and shorter wavelengths, has led to today’s primary lithographic production tool: the 193nm immersion scanner. With 20nm half-pitch fabrication, at half the effective resolution limit, it is necessary to use multiple patterning, either through pattern splitting and multiple exposures, or through a self-aligned spacer process. This leads to one of two consequences: on the one hand, to a significant increase in the number of mask levels, process cost, and manufacturing complexity; and, on the other hand, to significant layout restrictions which require closer collaboration between semiconductor design and manufacturing for optimal imaging results and high yield. Even so, for lithography
ASML , Veldhoven, The Netherlands, 1. Introduction