Third-Harmonic Injection Technique Applied to a 5.87-to-7.56GHz 65nm CMOS Class-F Oscillator with 192dBc/Hz FOM

📋 论文概要

该论文提出一种三次谐波注入技术，应用于65nm CMOS工艺的Class-F振荡器，实现了5.87-7.56GHz的频率范围并达到192dBc/Hz的优异FOM值，有效降低了相位噪声。

💡 主要创新点

• 提出三次谐波注入技术，通过增强三次谐波电压分量，使振荡器工作在Class-F模式，降低ISF rms值从而改善相位噪声。
• 利用低Q因数和强注入电流实现宽锁定范围，推动三次谐波振荡达到准方波波形，提升效率和谐波含量。

🏷 关键词

📄 原文摘要

Aktieve Rangschikkings Monolitische Microgolf Onderdelen B.V., Delft, The Netherlands 1 resonance frequency fosc2 to ‘snap’ to it if both are within the locking range [5]. The locking range is wide enough (±5%) due to the tank’s low Q-factor at fosc2 and high injection current (due to the square current of the gm transistors). Consequently, the third-harmonic oscillation voltage component is increased, so, we see a pseudo-square waveform across the tank (Fig. 20.2.3, right), thus justifying its “Class-F” designation. The ISF rms value of the proposed oscillator is much lower than in the traditional oscillators. Hence, the PN is less sensitive to the noise of gm devices and the transformer’s primary side. 2 The design of CMOS oscillators for the strict phase noise (PN) requirements of cellular standards, as well as low power consumption and thus high figure-ofmerit (FoM), is very challenging. For example, in a GSM mobile station (MS), the

👥 作者与机构

Masoud Babaie1,2, Robert Bogdan Staszewski1

Delft University of Technology, Delft, The Netherlands,