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本文提出一种采用电感分裂技术扩展调谐范围的32nm CMOS VCO，工作频率33.6-46.2GHz，实现了177.5dBc/Hz的最小噪声FOM，解决了毫米波频段超宽调谐与低相位噪声的挑战。
Signal processing in ultra-wide bandwidths is one of the key challenges in the design of multi-Gb/s wireless transceivers at mm-Waves, where channels covering 57GHz to 66GHz are specified. Further considering spreads due to process variations and the stringent reference phase noise to ensure signal integrity calls for an ultra-wide tuning range and low-noise on-chip oscillator. Meeting this target is even more challenging when adopting an ultra-scaled CMOS technology node where key passive components suffer from a reduced quality factor (Q) [1]. In a 32nm node the thickness of metals closer to the substrate is half that in a 65nm process leading, for example, to MOM capacitors with roughly half Q. The penalty is only marginally compensated by the higher transistor ft, improved only by ~20%. Various techniques exploiting alternative tuning implementations have been published recently. Magnetic tuning methods where the equivalent tank
Enrico Mammei1, Enrico Monaco2, Andrea Mazzanti1, Francesco Svelto1
University of Pavia, Pavia, Italy, 2STMicroelectronics, Pavia, Italy