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ISSCC 2013Session 26 · HIGH-SPEED DATA CONVERTERSData Converters32nm数字SOI

A 3.1mW 8b 1.2GS/s Single-Channel Asynchronous SAR ADC with Alternate Comparators for Enhanced Speed in 32nm Digital SOI CMOS

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📋 论文概要

本文提出一种采用交替比较器的异步冗余单通道SAR ADC,在32nm数字SOI工艺下实现1.2GS/s采样率,功耗仅3.1mW,解决了高速与低功耗的权衡问题。

💡 主要创新点

核心指标
8位分辨率,1.2GS/s采样率,3.1mW功耗,1V供电
工艺节点
32nm数字SOI
重要性
发表年份
ISSCC 2013

🏷 关键词

SAR ADC异步交替比较器32nm SOI高速低功耗

📄 原文摘要

Christian Menolfi1, Matthias Braendli1, Marcel Kossel1, Thomas Morf1, Toke Meyer Andersen1, Yusuf Leblebici2 IBM Research, Rüschlikon, Switzerland, 2EPFL, Lausanne, Switzerland 1 Next-generation digital high-speed links require fast, yet energy-efficient ADCs at minimum area. Recent years saw impressive progress in SAR ADC designs towards higher sampling speed. Asynchronous clocking [2-5], redundant capacitive DACs (CDAC) [2], multi-bit decisions per step [1,3-4] and interleaved designs [2-3] have been presented. We present an asynchronous redundant single-channel ADC achieving 1.2GS/s at 1V supply by using two comparators in alternation to relax comparator reset timing. The ADC achieves 39.3dB SNDR and 34fJ/conversion-step with a core chip area of 0.0015mm2. Figure 26.4.1 shows a block diagram of the ADC. The front-end T&H circuit consists of a sampling switch with feed-through and charge-injection compensation. The external clock ckext running at 12.5% duty cycle drives the T&H circu

👥 作者与机构

Lukas Kull1,2, Thomas Toifl1, Martin Schmatz1, Pier Andrea Francese1,

分类:Data Converters · 年份:ISSCC 2013