A 0.18μm CMOS SoC for a 100m-Range 10fps 200×96-Pixel Time-of-Flight Depth Sensor

📋 论文概要

本文提出一种基于0.18μm CMOS工艺的SoC，实现了100米距离、10fps帧率、200×96像素的飞行时间深度传感器。解决了现有CMOS深度传感器在强背景光下性能下降、测距范围有限（通常小于6米）以及无法处理多回波目标的问题。

💡 主要创新点

• 首次在CMOS SoC中实现100米远距离的飞行时间深度传感，显著扩展了测距范围。
• 在强背景光条件下仍能保持厘米级测距精度，克服了传统SPAD和锁相像素在户外环境下的性能退化。
• 通过系统级设计支持多回波目标环境，提升了复杂场景下的深度测量鲁棒性。

📄 原文摘要

at consumer electronics applications have recently appeared in CMOS. Diffusedlight sensors taking advantage of SPAD pixels [1,3], conventional [2] and pinned-photodiode lock-in [4,5] pixels demonstrate centimeter-ranging performance in distances of typically up to 6m, and with the exception of [2], under low background light (BG) conditions. In those approaches, however, performance tends to rapidly deteriorate in severe BG conditions, such as outdoors, and long-distance ranges have yet to be reported. Another common limitation is their inability to cope with multi-echo target environments. Higher optical signal-tobackground ratio (SBR), and hence better performance, is typically achieved by laser-scanning approaches, e.g. employing polygonal [6] or MEMS [7] mirrors. With the emerging need for high-resolution light detection and ranging (LIDAR)

👥 作者与机构

Cristiano Niclass, Mineki Soga, Hiroyuki Matsubara, Masaru Ogawa, Manabu Kagami

Toyota Central R&D Labs, Nagakute, Japan A number of potentially low-cost time-of-flight (ToF) 3D image sensors aiming