A 187.5μVrms-Read-Noise 51mW 1.4Mpixel CMOS Image Sensor with PMOSCAP Column CDS and 10b Self-Differential Offset-Cancelled Pipeline SAR-ADC

📋 论文概要

本文提出一种1.4M像素CMOS图像传感器，采用PMOSCAP列CDS和10位自差分偏移消除技术，在51mW功耗下实现了187.5μVrms的读噪声，解决了移动手机市场中低功耗和小面积的需求。

💡 主要创新点

• 使用PMOSCAP实现列级相关双采样（CDS），在减小面积的同时降低噪声。
• 提出10位自差分偏移消除结构，通过串行信号处理架构共享PGA和ADC，进一步降低功耗和芯片尺寸。

🏷 关键词

📄 原文摘要

Masayoshi Chiba1, Takeshi Miyaba2, Hideki Tanaka1, Kyoichi Takenaka2, Satoshi Funayama1, Kunihiko Amano1, Kazuhide Sugiura1, Ryuta Okamoto1, Shouhei Kousai1 Toshiba, Kawasaki, Japan, 2Toshiba Microelectronics, Kawasaki, Japan 1 Low-power and small-area implementations are essential in the mobile-phone market. Serial signal-processing architectures, in which signal-processing circuits such as a programmable-gain amplifier (PGA) and an ADC can be shared by column-level correlated double sampling (CDS) circuits [1-5], promise to reduce chip size and power consumption. However, conventional column CDS circuits composed of linear capacitors or NMOS capacitors (NMOSCAPs) with output buffers (OBUFs) still occupy a large footprint [2-5]. In this work, to reduce the area and the power consumption of column CDS circuits while keeping high linearity, 1.5V PMOS capacitors (PMOSCAPs) are employed. These

👥 作者与机构

Jun Deguchi1, Fumihiko Tachibana1, Makoto Morimoto1,