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本文提出了一种采用串并联变压器、晶体管堆叠和放大器堆叠三种技术的阵列RF功率放大器，在低电压CMOS工艺下实现了高输出功率和大带宽。该PA工作在5.3GHz，提供30.3dBm输出功率和1.9GHz带宽。
RF power amplifiers (PA) implemented in a scaled CMOS technology typically have a low maximum output power because they operate from a low supply voltage. This paper proposes an array RF PA able to deliver a large output power from a large supply voltage through the use of three techniques illustrated in Fig. 5.4.1: (1) series-parallel transformers, (2) transistor stacking, and (3) amplifier stacking. First, the array RF PA employs series-parallel combinations of transformers to provide simultaneous impedance transformation and power combining over a wide bandwidth. The integrated on-chip impedance transformation is more robust and reproducible than off-chip matching using discrete passive components. Second, stacking transistors in the array RF PA increases the output power provided by each of the unit PA stages comprising the array. Third, two PAs are stacked [1]. The two stacking methods increase the operating supply voltage, thus making possible an RF PA operating directly from a b
Maryam Fathi, David K. Su, Bruce A. Wooley
Stanford University, Stanford, CA