Experimental Demonstration of a Fully Digital Capacitive Sensor Interface Built Entirely Using Carbon-Nanotube FETs

📋 论文概要

该论文实验演示了首个完全由碳纳米管FET（CNFET）构建的全数字电容传感器接口，旨在实现极低功耗传感应用。通过利用CNFET在能量效率上的优势，解决了传统CMOS传感器接口在低功耗场景下能效不足的问题。

💡 主要创新点

• 首次完全使用碳纳米管FET实现全数字电容传感器接口，无需模拟电路模块。
• 展示了CNFET数字电路在传感器接口中的实际可行性，验证了其低功耗潜力。

🏷 关键词

📄 原文摘要

Georges Gielen2, H.-S. Philip Wong1, Subhasish Mitra1 Stanford University, Stanford, CA, KU Leuven, Heverlee, Belgium 1 2 Low-power applications, such as sensing, are becoming increasingly important and demanding in terms of minimizing energy consumption, driving the search for new and innovative interface architectures and technologies [1]. Carbon Nanotube FETs (CNFETs) are excellent candidates for further energy reduction. CNFET-based digital circuits are projected to potentially achieve an order of magnitude improvement in energy-delay product at highly scaled technology nodes [2, 3]. This paper presents a complete sensor interface implemented entirely using CNFETs that can be fabricated reproducibly in a VLSI-compatible fashion. This is made possible by using the imperfection-immune paradigm [4], which successfully overcomes major obstacles for CNFET-based circuits: mis-positioned and metallic carbon nanotubes (CNTs). 44 CNFETs, each consisting of 10 to 200

👥 作者与机构

Max Shulaker1, Jelle Van Rethy2, Gage Hills1, Hong-Yu Chen1,