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ISSCC 2013Session 8 · MILLIMETER-WAVE TECHNIQUESmm-Wave32nm SOI CMOS

A 210GHz Fully Integrated Differential Transceiver with Fundamental-Frequency VCO in 32nm SOI CMOS

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📋 论文概要

该论文提出了一款工作在210GHz的全集成差分收发机,采用32nm SOI CMOS工艺,通过基频VCO实现信号生成,解决了亚THz频段缺乏射频放大和高效信号生成的问题,为10Gb/s芯片间无线通信和成像/光谱学等应用提供了CMOS集成方案。

💡 主要创新点

工艺节点
32nm SOI CMOS
重要性
发表年份
ISSCC 2013

🏷 关键词

210GHz差分收发机基频VCOSOI CMOS亚THz通信

📄 原文摘要

Institute of Technology, Beijing, China 1 3 The vastly under-utilized spectrum in the sub-THz frequency range enables disruptive applications including 10Gb/s chip-to-chip wireless communications and imaging/spectroscopy. Owing to aggressive scaling in feature size and device fT/fmax, nanoscale CMOS technology potentially enables integration of sophisticated systems at this frequency range. For example, CMOS sub-THz signal sources and TRXs have been reported [1-4], employing techniques such as distributed active radiator (DAR) and super-harmonic signal generator. The lack of RF amplification in CMOS sub-THz TRXs reported in prior work, however, results in low efficiency (and thus higher power dissipation), and high noise-figure (NF). This paper addresses these issues by demonstrating a 210GHz TRX with on-offkeying (OOK) modulation incorporating a 2×2 TX antenna array, a

👥 作者与机构

Zheng Wang1, Pei-Yuan Chiang1, Peyman Nazari1, Chun-Cheng Wang2,

Zhiming Chen3, Payam Heydari1 University of California, Irvine, CA, 2Peregrine Semiconductor, San Diego, CA, Beijing

分类:mm-Wave · 年份:ISSCC 2013