A 260GHz Broadband Source with 1.1mW Continuous-Wave Radiated Power and EIRP of 15.7dBm in 65nm CMOS

📋 论文概要

本文提出了一种在65nm CMOS工艺中实现的260GHz宽带辐射源，实现了1.1mW连续波辐射功率和15.7dBm等效全向辐射功率(EIRP)。解决了现有CMOS太赫兹源带宽不足的问题，适用于便携式太赫兹光谱系统。

💡 主要创新点

• 采用宽带设计技术，在260GHz频段实现了比传统CMOS源更宽的调谐范围（具体带宽未在摘要中给出，但目标是宽带）。
• 实现了较高的辐射功率（1.1mW）和EIRP（15.7dBm），为CMOS太赫兹源在光谱成像等应用中提供足够输出。

🏷 关键词

📄 原文摘要

Terahertz spectroscopy using silicon technology is gaining attraction for future portable and affordable material identification equipment. To do this, a broadband THz radiation source is critical. Unfortunately, the bandwidth of the prior CMOS works is not sufficient. In [1], the 300GHz signal source achieves 4.5% tuning range by changing the coupling among multiple oscillators. In [2], the DAR array has 3% tuning range with radiation capability. Alternative to the continuous device-tuning method, THz time-domain spectroscopy utilizing the broadband spectrum of picosecond pulses is widely used in the optics community [3]. In this paper, a high-power pulse-based sub-millimeter-Wave radiation source using 65nm bulk CMOS technology is reported. The architecture of this transmitter is shown in Fig. 8.2.1, where four differential core oscillator pairs are mutually coupled through four quadrature oscillators. Each core oscillator pair

👥 作者与机构

Ruonan Han, Ehsan Afshari

Cornell University, Ithaca, NY