A 260GHz Amplifier with 9.2dB Gain and -3.9dBm Saturated Power in 65nm CMOS Omeed Momeni

📋 论文概要

该论文在65nm CMOS工艺中设计并实现了一个工作于260GHz的放大器，获得了9.2dB的增益和-3.9dBm的饱和输出功率。主要解决了晶体管在接近最大振荡频率（fmax）时可用增益急剧下降的问题，为太赫兹和毫米波系统提供了有效的信号放大方案。

💡 主要创新点

• 提出了一种适用于近fmax频率的增益提升技术，通过优化电路拓扑和匹配网络，在260GHz实现了超过晶体管本征增益的放大。
• 在65nm CMOS工艺中成功实现了260GHz放大器，展示了CMOS技术在太赫兹频段的潜力。

🏷 关键词

📄 原文摘要

applications in health, security and industry. Recently, CMOS technology is used to implement these systems for applications such as imaging, high-speed communication and radar [1]. Signal amplification for the target THz and high mmWave applications entails daunting design challenges, as operation frequency is getting closer to the Maximum Oscillation Frequency (fmax) of the transistors. This is mostly because the maximum available gain (Gma) drops significantly below useful levels at frequencies close to fmax. In this paper we introduce an amplifier that can boost the gain of the transistors close to the maximum fundamental value and achieves 9.2dB of gain and -3.5dBm of saturated output power at around 260GHz. To increase the gain and efficiency of the amplifiers, unilateralization has been widely employed. The maximum theoretical gain that can be achieved using this technique is equal to Mason’s invariant function, U. At frequencies close to fmax,

👥 作者与机构

University of California, Davis, CA, Terahertz and millimeter-wave systems are known to have unique and significant