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本文提出了一种全集成42GHz功率放大器架构，通过16路零度合成器组合16个片上PA，实现了0.7W输出功率和10%的功率附加效率，解决了硅基毫米波PA输出功率不足的问题。
North Carolina State University, Raleigh, NC 1 2 In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an output power of 0.7W with a power-added efficiency (PAE) of 10% at 42GHz and a -3dB bandwidth of 9GHz. This is 2.6 times more output power than a recently reported millimeter-Wave (mm-Wave) silicon-based PA [1]. The circuit is a fully integrated mm-Wave PA achieving a leading output power approaching 1 Watt in a silicon process. To date only a few published mm-Wave PAs in silicon have achieved a saturated output power of more than 20dBm (100mW) [2-6]. The difficulty in achieving high output powers at mm-Wave frequencies lies in the limited output power of a single PA, which is constrained by maximum current density, breakdown voltage and parasitics of the technology. Moreover, to obtain maximum power
Wei Tai1, L.Richard Carley1, David S. Ricketts2
Carnegie Mellon University, Pittsburgh, PA,