A 10mW 37.8GHz Current-Redistribution BiCMOS VCO with an Average FOMT of -193.5dBc/Hz

📋 论文概要

提出了一种基于电流重分布技术的BiCMOS LC-VCO，工作在37.8GHz，功耗仅10mW，平均FOMT达到-193.5dBc/Hz。通过6位粗调变容器阵列降低VCO增益，并结合温度计编码减少粗调位失配，有效抑制AM-PM转换噪声。

💡 主要创新点

• 采用电流重分布技术，在低功耗下实现毫米波频段的高性能VCO。
• 设计了6位粗调变容器阵列，其中3个高位使用温度计编码、3个低位使用二进制编码，以降低VCO增益和失配影响。

🏷 关键词

📄 原文摘要

Steven R. Dooley2, Jamin J McCue1, Pompei L. Orlando2, Gregory L. Creech2, Waleed Khalil1 Ohio State University, Columbus, OH, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 1 Figure 8.8.3 shows the schematic of the proposed BiCMOS LC-VCO. A 6b coarse-tuned varactor array is employed to lower the VCO gain (KV) and thus minimize the AM-PM conversion. To reduce the mismatch between different coarse tuning bits, a thermometer varactor array is utilized for the 3 most significant bits, while a binary structure is used for the 3 least significant bits. Special consideration is given to the layout of the varactor array to balance the parasitic inductance of the long traces connecting across the varactor cells (Fig. 8.8.3). This is seen as critical in ensuring a uniform overlap between the 64 tuning curves at high frequencies. 2 The continued scaling of digital CMOS technology has enabled mm-Wave VCOs

👥 作者与机构

Qiyang Wu1, Tony Quach2, Aji Mattamana2, Salma Elabd1,