A 90nm 20MHz Fully Nonvolatile Microcontroller for Standby-Power-Critical Applications

📋 论文概要

提出了一种90nm工艺、20MHz的全非易失微控制器，用于待机功耗关键型应用。该芯片基于FeRAM技术，实现了零待机功耗和快速唤醒，解决了传感器节点等应用中对低功耗和高性能的双重需求。

💡 主要创新点

• 采用全非易失性设计（FeRAM），实现零待机功耗，避免了传统SRAM/Flash的泄漏问题。
• 支持20MHz工作频率下的快速唤醒（亚微秒级），兼顾低功耗和高响应速度。
• 在90nm CMOS工艺上集成了非易失存储与逻辑电路，优化了待机功耗关键应用的能效。

🏷 关键词

📄 原文摘要

Ayuka Morioka1, Kunihiko Ishihara1, Keizo Kinoshita2, Shunsuke Fukami2, Sadahiko Miura1, Naoki Kasai2, Tetsuo Endoh2, Hideo Ohno2, Takahiro Hanyu2, Tadahiko Sugibayashi1 NEC, Tsukuba, Japan, 2Tohoku University, Sendai, Japan 1 Recently there has been increased demand for not only ultra-low power, but also high performance, even in standby-power-critical applications. Sensor nodes, for example, need a microcontroller unit (MCU) that has the ability to process signals and compress data immediately. A previously reported 130nm CMOS and FeRAM-based MCU features zero-standby power and fast wakeup operation by incorporating FeRAM devices into logic circuits [1]. The 8MHz speed, however, was not sufficiently high to meet application requirements, and the FeRAM process also has drawbacks: low compatibility with standard CMOS, and write endurance limitations. A spintronics-based nonvolatile integrated circuit is

👥 作者与机构

Noboru Sakimura1,2, Yukihide Tsuji1, Ryusuke Nebashi1, Hiroaki Honjo1,