A 1Gb 2GHz Embedded DRAM in 22nm Tri-Gate CMOS Technology

📋 论文概要

本文提出了一款在22nm Tri-Gate CMOS工艺上实现的1Gb 2GHz嵌入式DRAM，旨在满足高性能计算对高带宽和大容量片上存储的需求。通过工艺和电路创新，该eDRAM实现了与SRAM相当的速度，同时提供了更高的存储密度。

💡 主要创新点

• 采用22nm Tri-Gate CMOS工艺，实现了高密度嵌入式DRAM集成。
• 在1Gb容量下达到2GHz工作频率，通过优化存储单元和读写路径提升带宽。
• 替代传统SRAM，在相同面积下提供更大容量，满足高性能处理器对片上存储的需求。

🏷 关键词

📄 原文摘要

Manoj B. Lal, Nick Lindert, Mesut Meterelliyoz, Randy B. Osborne, Joodong Park, Shigeki Tomishima, Yih Wang, Kevin Zhang Intel, Hillsboro, OR CMOS technology scaling continues to drive higher levels of integration in VLSI design, which adds more compute engines on a die. To meet the overall performance-scaling needs, high-speed and high-bandwidth memory is becoming increasingly important. Conventional VLSI systems often rely on ondie SRAMs to address the performance gap between CPU and main memory, DRAM. However, with the rapid growth in capacity needs for high-performance memory, SRAM is not always sufficient to meet the demands of bandwidthintense applications. Embedded DRAM (eDRAM) has been explored as an alternative to satisfy the high-performance and density needs in memory [1-3]. In this paper, a high-performance eDRAM based on a 22nm tri-gate CMOS technology is introduced. This eDRAM technology enables the integration of an

👥 作者与机构

Fatih Hamzaoglu, Umut Arslan, Nabhendra Bisnik, Swaroop Ghosh,