A 7ns-Access-Time 25µW/MHz 128kb SRAM for Low-Power Fast Wake-Up MCU in 65nm CMOS with 27fA/b Retention Current

📋 论文概要

本文提出了一款用于低功耗快速唤醒MCU的128kb SRAM，采用65nm CMOS工艺，实现了7ns的访问时间和25µW/MHz的功耗，同时保持电流低至27fA/bit，有效延长了电池寿命。

💡 主要创新点

• 通过电路和工艺优化，实现了极低的27fA/bit保持电流，显著降低待机功耗。
• 在保持低功耗的同时，实现了7ns的快速访问时间，满足快速唤醒MCU的需求。
• 整体功耗仅25µW/MHz，适用于传感器网络和能源管理系统等电池供电应用。

🏷 关键词

📄 原文摘要

Yasuhisa Takeyama1, Tsuyoshi Midorikawa1, Kenji Hashimoto2, Ichiro Wakiyama2, Shinji Miyano1, Takehiko Hojo1 Toshiba, Kawasaki, Japan, 2Toshiba Microelectronics, Kawasaki, Japan 1 Battery lifetime is the key feature in the growing markets of sensor networks and energy-management system (EMS). Low-power MCUs are widely used in these systems. For these applications, standby power, as well as active power, is important contributor to the total energy consumption because active sensing or computing phases are much shorter than the standby state. Figure 13.4.1 shows a typical power profile of low-power MCU applications. To achieve many years of battery lifetime, the power consumption of the chip must be kept below 1μA during deep sleep mode. Another key feature of a low-power MCU for such applications is fast wake-up from deep-sleep mode, which is important for low application latency and to keep wake-up energy minimal. For fast wake-up, the

👥 作者与机构

Toshikazu Fukuda1, Koji Kohara1, Toshiaki Dozaka1,