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ISSCC 2014Session 13 · ADVANCED EMBEDDED MEMORYMemory28nm CMOS

A 28nm 400MHz 4-Parallel 1.6Gsearch/s 80Mb Ternary CAM

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

该论文提出一种基于28nm CMOS工艺的4并行三元内容可寻址存储器(TCAM),工作频率400MHz,可实现1.6G次搜索/秒、容量80Mb。通过电荷分享产生参考电压和差分匹配检测技术,有效解决高速搜索中的功耗与速度权衡问题,适用于IPv4路由表等网络应用。

💡 主要创新点

核心指标
1.6Gsearch/s @ 400MHz, 80Mb容量
工艺节点
28nm CMOS
重要性
发表年份
ISSCC 2014

🏷 关键词

三元内容可寻址存储器并行搜索网络路由电荷分享参考电压匹配放大器

📄 原文摘要

enable signal (MLPRE) is negated, the ML is discharged (search miss) or maintains the VDD level (match). The ML reference voltage REFVD is generated by charge sharing between REFVD and REFVS nodes, lowering to 700mV and obtaining a 150mV deferential voltage for both miss and match search results. When the match-amplifier enable (MAE) is triggered, the match amplifier detects the differential voltage and presents the result at output terminal MAOUT. 1 2 The number of IPv4 routing table entries was around 460k in 2012 and is growing at a rate of 10% per year. The continuing increase of network-connected devices risks depletion of IPv4 addresses. As for IPv6, the number of routingtable entries is about to reach 16k with a rapid annual growth rate of 90%. This

👥 作者与机构

Koji Nii1, Teruhiko Amano2, Naoya Watanabe2, Minoru Yamawaki3,

Kenji Yoshinaga3, Mihoko Wada3, Isamu Hayashi2 Renesas Electronics, Kodaira, Japan, Renesas Electronics, Itami, Japan, 3 Renesas Design, Itami, Japan the ML pre-charge

分类:Memory · 年份:ISSCC 2014