A 32kb SRAM for Error-Free and Error-Tolerant Applications with Dynamic Energy-Quality Management in 28nm CMOS

📋 论文概要

该论文提出了一种32kb SRAM，通过动态能量-质量管理，在28nm CMOS工艺中同时支持无错误和容错应用。它解决了传统电压缩放因工艺变化导致的Vmin限制问题，允许在低于Vmin的电压下运行以提升能效，同时通过错误容忍机制保证应用质量。

💡 主要创新点

• 提出动态能量-质量管理机制，根据应用需求在无错误和容错模式间动态切换，优化能效。
• 在28nm CMOS工艺中实现32kb SRAM，支持低于Vmin的电压缩放，通过错误容忍技术维持应用质量。

🏷 关键词

📄 原文摘要

Singapore 1 2 Voltage scaling is widely used to improve SRAM energy efficiency [1-2], particularly in mobile systems with tight power budgets. The resulting energy benefits are limited by the minimum voltage ensuring error-free operation, Vmin, which has stagnated due to growing process variation in advanced technology nodes [3]. Error-tolerant applications and systems (e.g., multimedia) allow more aggressive voltage scaling by operating below Vmin, which is acceptable if errors due to bitcell write/read failures do not perceptibly reduce application quality (e.g., image quality). Unfortunately, in traditional SRAMs bit error rate degrades rapidly for VDD < Vmin [4], limiting energy gains. Under a given quality target, further energy reduction is possible through application-specific methods that

👥 作者与机构

Fabio Frustaci1,2, Mahmood Khayatzadeh2, David Blaauw2,

Dennis Sylvester2, Massimo Alioto3 University of Calabria, Rende, Italy, University of Michigan, Ann Arbor, MI, 3 National University of Singapore, Singapore,