A 0.9V 20.9dBm 22.3%-PAE E-Band Power Amplifier with Broadband Parallel-Series Power Combiner in 40nm CMOS

📋 论文概要

该论文提出了一种在40nm CMOS工艺上实现的E波段功率放大器，工作电压0.9V，输出功率20.9dBm，峰值PAE 22.3%。采用宽带并联-串联功率合成器，实现了在71-86GHz频段内均匀的增益和输出功率，解决了低电压下高输出功率和高效率的挑战。

💡 主要创新点

• 提出宽带并联-串联功率合成器结构，实现了毫米波频段的高效功率合成和宽带匹配。
• 在0.9V低电源电压下实现了超过20dBm的输出功率和22.3%的PAE，突破了低电压毫米波功率放大器的性能限制。

📄 原文摘要

The 71-to-76GHz and 81-to-86GHz bands (known as E-band) exhibit low atmospheric attenuation and are allocated by FCC and CEPT for long-haul transmission. They enable multi-Gb/s fixed-link services such as fiber extension/replacement and cellular backhaul. It is beneficial to have a device operating in both 5GHz bands for high data throughput (due to full usage of the 5GHz band) and low interference (due to the 10GHz spacing between two bands). This requires a PA that delivers uniform gain and output power from 71 to 86GHz. An output power of more than 20dBm is also desired for sufficient link margin to accommodate rain attenuation. These requirements are not satisfied by prior reported 70/80GHz PAs in silicon-based technology [1-4]. This paper reports a fully integrated 40nm CMOS PA that utilizes a broadband parallel-series power combiner to achieve an output power (POUT) of 20.9dBm with more than 15GHz small-signal 3dB bandwidth (BW-3dB) and 22% PAE at

👥 作者与机构

Dixian Zhao, Patrick Reynaert

KU Leuven, Leuven, Belgium