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本文提出一种采用推挽结构的毫米波功率放大器，在40nm CMOS工艺中实现了低于0.8°的AM-PM失真，解决了Class-AB和Class-B偏置下因高PAPR信号导致的线性度恶化问题。
Millimeter-Wave standards like IEEE 802.15.3c and the new 802.11ad have classifications of their PHY to support single-carrier mode and more complex OFDM mode (high-speed interface) with high peak-to-average ratio (PAPR). To improve the efficiency of power amplifiers (PA), the trend is towards Class-AB and Class-B PAs that exhibit better energy efficiency compared to Class-A. However, Class-AB and -B biasing brings along large amplitude-to-phasemodulation (AM-PM) distortion which degrades EVM and ACPR. At the same time, PMOS transistors become attractive in nanometer CMOS as their fMAX exceeds 140GHz. This makes it possible to use both NMOS and PMOS transistors at mm-Wave frequencies. This paper presents a 60GHz complementary Push-Pull PA, using both NMOS and PMOS transistors. An inverter-like architecture which uses both PMOS and NMOS results in the cancellation of AM-PM distortion which is particularly important in high-fidelity
Shailesh Kulkarni, Patrick Reynaert
KU Leuven, Leuven, Belgium