⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种工作在24-31GHz的F-1/F类功率放大器，采用0.13µm SiGe BiCMOS工艺，通过优化谐波阻抗和功率合成技术，实现了40.7%的峰值PAE、15dBm的OP1dB和50mW的饱和输出功率，解决了毫米波PA阵列中热密度和可靠性问题。
using PA arrays and by combining individual PA output powers either on chip with linear combiners or in free space with antenna arrays [1,2]. Therefore, the output power of a PA element can be compromised by the array size. The overall array’s power-added-efficiency (PAE) is predominantly determined by the unit PA, which is the most critical performance metric to contain thermal and reliability issues, especially in highly integrated large PA arrays, since thermal density will be proportional to the increase of power density. Class-F and Class-F-1 topologies are promising candidates for a high PAE at microwave and mm-Wave frequencies because on-chip high-Q passive components with a small formfactor will be readily available for a tuned load to terminate multiple harmonics
40.7% Peak PAE, 15dBm OP1dB, and 50mW Psat in, 0.13µm SiGe BiCMOS
Seyed Yahya Mortazavi, Kwang-Jin Koh Virginia Polytechnic Institute, Blacksburg, VA The output power of power amplifiers (PAs) can be increased by