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本文提出了一种工作在0.53THz的可重构源阵列，用于太赫兹成像应用，在0.13µm SiGe BiCMOS工艺中实现了高达1mW的辐射功率。该阵列解决了被动成像灵敏度不足的问题，为太赫兹相机提供人工照明。
silicon-based THz video cameras have been demonstrated for industrial, surveillance, scientific, and medical applications in the THz range (300GHz to 3THz) [1]. Such camera implementations favor pixels with antennacoupled direct detectors for a low power dissipation and a high pixel count. Despite this progress, they lack the required sensitivity for passive imaging and imagers are in the need of artificial illumination to provide the required image quality. The choice has been to use expensive high-power focused illumination with a single direction for the incoming beam, which seriously limits the image quality due to its specular nature. Additionally, detectors in a focal-plane array configuration share the available source power and the image SNR further drops
Ullrich R. Pfeiffer1, Yan Zhao1, Janusz Grzyb1, Richard Al Hadi1,
Neelanjan Sarmah1, Wolfgang Förster1, Holger Rücker2, Bernd Heinemann2 University of Wuppertal, Wuppertal, Germany, IHP, Frankfurt (Oder), Germany 1 2 Recently,