A Scalable THz 2D Phased Array with +17dBm of EIRP at 338GHz in 65nm Bulk CMOS

📋 论文概要

该论文提出了一种可扩展的太赫兹二维相控阵架构，在65nm bulk CMOS工艺中实现了338GHz的相干功率合成，解决了太赫兹频段片上功率产生和传输的难题。最终实现了+17dBm的等效各向同性辐射功率（EIRP），为高分辨率成像和光谱学应用提供了CMOS集成方案。

💡 主要创新点

• 提出可扩展的二维相控阵架构，在太赫兹频段实现多个源的相干功率合成，有效提升辐射功率。
• 在65nm bulk CMOS中实现338GHz的振荡和辐射，突破了器件fmax限制，展示了CMOS工艺在太赫兹频段的潜力。
• 实现了+17dBm的EIRP，是当时CMOS太赫兹源的最高水平之一，验证了功率合成技术的有效性。

🏷 关键词

📄 原文摘要

There is an untapped market for integrated high-resolution imaging and spectroscopy at mm-Wave and THz frequencies. Some novel approaches have been recently proposed to render on-chip signal generation and transmission at these frequencies [1-4]. However, as the frequency approaches the physical limitations of the device, self-sustained oscillation becomes increasingly difficult and the generated power fades away. Fortunately, the limited power from individual devices can be offset by coherent power-combining of multiple sources. A desirable mechanism to generate high power levels above the fmax, has to provide a solution that first, enables a scalable approach to generate and combine the maximum available power from individual sources and second, ensures controllable phase shift between multiple sources in order to provide beam steering at any desired direction. In traditional phased arrays as the number of rows and columns increases, the

👥 作者与机构

Yahya Tousi, Ehsan Afshari

Cornell University, Ithaca, NY