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ISSCC 2014Session 14 · MILLIMETER-WAVE AND TERAHERTZ TECHNIQUESmm-Wave90nm SiGe BiCMOS

A 300GHz Frequency Synthesizer with 7.9% Locking Range in 90nm SiGe BiCMOS

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📋 论文概要

针对太赫兹开环信号源频率漂移问题,采用90nm SiGe BiCMOS工艺设计了一款300GHz频率合成器,实现了7.9%的锁定范围。该合成器通过锁相环或注入锁定技术提高了频率稳定性,适用于相干通信和雷达系统。

💡 主要创新点

核心指标
7.9% locking range @ 300GHz
工艺节点
90nm SiGe BiCMOS
重要性
发表年份
ISSCC 2014

🏷 关键词

300GHz频率合成器SiGe BiCMOS锁定范围

📄 原文摘要

University of California, Davis, CA 1 2 The THz/sub-mm-Wave band is known to provide unique applications in spectroscopy, imaging and high-data-rate wireless communication. An accurate THz source is essential in coherent communications, radar systems, and frequency metrology. Recently, THz sources based on coupled VCOs with harmonic generation have been proposed [1]. However, open-loop signal sources exhibit severe frequency fluctuation, and are vulnerable to temperature/process/supply-induced frequency drift. The need for precise oscillation frequency with wide tuning range and low close-in phase noise calls for closed-loop topologies. Millimeter-Wave PLLs incorporating push-push VCOs have been demonstrated up to 164GHz [2] in silicon technology. [3] presented a 300GHz PLL with 0.12% locking range in III-IV technology. In a high-frequency synthesizer, the VCO and the divider exert dominant effects

👥 作者与机构

Pei-Yuan Chiang1, Zheng Wang1, Omeed Momeni2, Payam Heydari1

University of California, Irvine, CA,

分类:mm-Wave · 年份:ISSCC 2014