A 247-to-263.5GHz VCO with 2.6mW Peak Output Power and 1.14% DC-to-RF Efficiency in 65nm Bulk CMOS

📋 论文概要

该论文提出了一款工作在247至263.5GHz的压控振荡器(VCO)，采用65nm体硅CMOS工艺，实现了2.6mW的峰值输出功率和1.14%的直流到射频效率。通过创新的电路设计克服了CMOS器件fmax不足的限制，为太赫兹频段信号生成提供了低成本、高集成度的解决方案。

💡 主要创新点

• 采用谐波振荡器结构，利用晶体管非线性产生高频信号，突破了CMOS器件fmax的限制。
• 通过优化谐振网络和输出匹配网络，在247-263.5GHz频段实现了2.6mW的峰值输出功率和1.14%的直流到射频效率。

🏷 关键词

📄 原文摘要

Signal generation at mm-Wave-to-THz frequencies is attractive because of its applications in bio-sensing, spectroscopy, detection of concealed weapons, as well as high-data-rate communication. CMOS is considered a potential platform to implement a low-cost and high-yield signal generation solution at this frequency range. Despite continuous scaling, effective fmax of active devices is not high enough and hence either harmonic oscillators or frequency multipliers are employed for high-frequency signal generation. In recent CMOS VCO designs, reasonable power levels (~1mW) and tuning range (~10GHz) have been reported at around 300GHz but with very low DC-to-RF efficiency (<0.4%), which is undesirable for portable applications [1,4]. Moreover, power-level fluctuation is more than 3dB across the frequency range [1]. In this work, we introduce a scalable VCO architecture that efficiently generates and extracts the

👥 作者与机构

Muhammad Adnan, Ehsan Afshari

Cornell University, Ithaca, NY