⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文介绍了一款采用16nm平面单元技术的128Gb MLC NAND闪存器件，实现了高存储密度和成本效益，解决了NAND闪存按比例缩小的挑战。
Cairong Hu1, Heonwook Kim1, Kalyan Kavalipurapu1, Eric Lee1, Ali Mohammadzadeh1, Dan Nguyen1, Vipul Patel1, Ted Pekny1, Bill Saiki1, Daesik Song1, Jeff Tsai1, Vimon Viajedor1, Luyen Vu1, Tinwai Wong1, Jung Hee Yun1, Ramin Ghodsi1, Andrea D’Alessandro2, Domenico Di Cicco2, Violante Moschiano2 Micron, San Jose, CA, 2Micron, Avezzano, Italy 1 The aggressive scaling of NAND Flash memory technology—one that is even outpacing Moore’s Law—has enabled very rapid cost-per-bit reduction, resulting in an explosion of systems utilizing this versatile memory technology. From removable media and personal music players to smart phones, tablets, and now personal computers and data center applications employing client and enterprise solid state drives (SSDs), NAND technology is making solid-state memory-based storage affordable. Maintaining this rapid pace in cost reduction faces many challenges, especially
Mark Helm1, Jae-Kwan Park1, Ali Ghalam1, Jason Guo1, Chang wan Ha1,