Sunghyun Jung, Kichang Chun, Namkyeong Kim, Wanseob Lee, Taisik Shin, Hyunjong Jin, Hyunchul Cho, Sunghoon Ahn, Yonghwan Hong, Ingon Yang, Byoungyoung Kim, Pilseon Yoo, Youngdon Jung, Jinwoo Lee, Jaehyeon Shin, Taeyun Kim, Kunwoo Park, Jinwoong Kim SK Hynix, Icheon, Korea The demand for high-density low-cost NAND-Flash memory devices is growing due to the increase in the NAND-Flash application market such as SSD for tablet PCs and ultra-books as well as conventional mobile applications such as USB drives and digital still cameras. Various approaches to implement high-density NAND Flash with small area have been introduced to address the market. Moving from a single-level cell (SLC) to 2 bits per cell (MLC) or to 3 bits per cell is one of the approaches to increasing memory density with the same die area. Lithographic shrinking with conventional 2D technology is the most mature technology although 3D stacking technologies [1] are being developed.
Sungdae Choi, Duckju Kim, Sungwook Choi, Byungryul Kim,