Embedded 1Mb ReRAM in 28nm CMOS with 0.27-to1V Read Using Swing-Sample-and-Couple Sense Amplifier and Self-Boost-Write-Termination Scheme

📋 论文概要

该论文提出了一种在28nm CMOS工艺中实现的嵌入式1Mb ReRAM，通过采用摆动采样耦合读出放大器和自升压写入技术，实现了0.27V至1V的宽电压读取，解决了传统ReRAM在低电压下读取速度慢和写入效率低的问题。

💡 主要创新点

• 提出摆动采样耦合读出放大器（Swing-Sample-and-Couple Sense Amplifier），在宽电压范围内实现快速读取。
• 引入自升压写入技术（Self-Boost-Write-T），降低写入电压并提高写入效率。
• 在28nm CMOS工艺中成功集成1Mb ReRAM，验证了低功耗嵌入式非易失存储器的可行性。

🏷 关键词

📄 原文摘要

Ting-Chin Yang1, Wen-Chao Shen1, Ya-Chin King1, Chorng-Jung Lin1, Ku-Feng Lin2, Yu-Der Chih2, Sreedhar Natarajan2, Jonathan Chang2 National Tsing Hua University, Hsinchu, Taiwan, 2TSMC, Hsinchu, Taiwan 1 Resistive RAM (ReRAM) is a promising nonvolatile memory with low write energy, logic-process compatibility, and compact cell area. The 1T1R ReRAM [1-3] fits embedded applications requiring fast read (RD) access time (TAC) and low RD-VDDMIN, particularly for devices powered by batteries or energy harvesters. The cross-point ReRAM [4-6] is meant for high capacities with high RD-VDDMIN and slow TAC. As devices shrink, ReRAMs have higher cell resistance (R) and greater variations in write time and R, which reduces the R-ratio (RH/RL) between the high-R state (HRS, RH) and low-R state (LRS, RL). ReRAM also have a high RL, which enables a larger voltage drop across ReRAM to reduce write voltage and cell-switch (CS) size. Thus, ReRAM macro designs suffer: (1) small

👥 作者与机构

Meng-Fan Chang1, Jui-Jen Wu1, Tun-Fei Chien1, Yen-Chen Liu1,