Hybrid Storage of ReRAM/TLC NAND Flash with RAID-5/6 for Cloud Data Centers

📋 论文概要

该论文针对云数据中心对可靠性、速度和容量的需求，开发了基于RAID-5/6的混合存储系统，结合ReRAM和TLC NAND闪存。通过五种技术（如灵活RRef、自适应非对称编码、验证尝试减少等）分别优化ReRAM和TLC NAND，显著提升了比特错误率、性能、故障率和寿命。

💡 主要创新点

• 将RAID-5/6架构引入混合存储系统，结合ReRAM和TLC NAND闪存，实现云数据中心所需的高可靠性和性能。
• 针对50nm ReRAM提出三项技术（灵活RRef、自适应非对称编码、验证尝试减少），使比特错误率降低69%，性能提升97%。
• 针对2Xnm TLC NAND提出平衡RAID-5/6和比特/单元优化技术，使故障率降低98%，并延长写入寿命。

🏷 关键词

📄 原文摘要

RAID-5/6 is developed to meet cloud data-center requirements of reliability, speed and capacity. The storage controller enhances reliability and performance through five techniques with minimal area overhead. The first three approaches, (i) flexible RRef (FR), (ii) adaptive asymmetric coding (AAC), and (iii) verify trials reduction (VTR), are applied to 50nm ReRAM to improve the bit-error rate (BER) by 69% and performance by 97%. Techniques (iv) balanced RAID-5/6 and (v) bits/cell optimization (BCO) are applied to 2Xnm TLC NAND to reduce the failure rate by 98% and extend the lifetime (write/erase (W/E) cycles) by >22×, respectively. Conventionally, in hybrid ReRAM/MLC (2bits/cell) NAND, high-speed ReRAM is paired in small ratios with high capacity NAND, and data is allocated based on

👥 作者与机构

Shuhei Tanakamaru1,2, Hiroki Yamazawa1, Tsukasa Tokutomi1,

Sheyang Ning1,2, Ken Takeuchi1 Chuo University, Tokyo, Japan, 2University of Tokyo, Tokyo, Japan 1 A hybrid storage architecture of ReRAM and TLC (3b/cell) NAND Flash with