A 16Gb ReRAM with 200MB/s Write and 1GB/s Read in 27nm Technology

📋 论文概要

本文实现了一款16Gb容量的ReRAM芯片，采用27nm工艺，达到了200MB/s的写入速度和1GB/s的读取速度，解决了以往高密度ReRAM阵列读写性能低的问题。

💡 主要创新点

• 在16Gb高密度ReRAM阵列上同时实现了200MB/s写入和1GB/s读取的高性能，突破了密度与性能的权衡。
• 采用27nm先进工艺节点，结合优化的读写路径和架构，实现了高吞吐量。

🏷 关键词

📄 原文摘要

Duane Mills1, Keiichi Tsutsui4, Jahanshir Javanifard1, Kerry Tedrow1, Tomohito Tsushima2, Yoshiyuki Shibahara4, Glen Hush3 Micron, Folsom, CA, Sony, Boise, ID, 3 Micron, Boise, ID, 4 Sony, Kanagawa, Japan 1 2 Resistive RAMs (ReRAMs) have emerged as leading candidates to displace conventional Flash memories due to their high density, good scalability, low power and high performance. Previous ReRAM designs demonstrating high performance have done so on low density arrays (<1Gb) while those reporting high-density arrays (>8Gb) were accompanied by relatively low read and write performance [1-5]. This work describes a 16Gb ReRAM designed in a 27nm node, with a 1GB/s DDR interface and an 8-bank concurrent DRAM-like core architecture. High parallelism, a pipelined data-path architecture and innovations such as concurrent set/reset verify combine to achieve 200MB/s write and 1GB/s read throughputs in a high-density device.

👥 作者与机构

Richard Fackenthal1, Makoto Kitagawa2, Wataru Otsuka2, Kirk Prall3,