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ISSCC 2014Session 26 · ENERGY-EFFICIENT DENSE INTERCONNECTSOther40nm CMOS

A Pin- and Power-Efficient Low-Latency 8-to-12Gb/s/wire 8b8w-Coded SerDes Link for High-Loss Channels in 40nm Technology

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📋 论文概要

该论文提出了一种采用8b8w编码的SerDes链路,在40nm工艺下实现8-12Gb/s/wire的数据速率,旨在解决高损耗信道下带宽需求增加的问题,同时降低引脚数和功耗,并实现低延迟。

💡 主要创新点

工艺节点
40nm CMOS
重要性
发表年份
ISSCC 2014

🏷 关键词

8b8w编码SerDes低延迟高能效高损耗信道

📄 原文摘要

Fabio Licciardello1, Kia Salimi1, Hugo Santos1, Amin Shokrollahi1, Roger Ulrich1, Christoph Walter1, John Fox2, Peter Hunt2, John Keay2, Richard Simpson2, Andy Stewart2, Giuseppe Surace2, Harm Cronie3 Kandou Bus, Lausanne, Switzerland, Kandou Bus, Northampton, United Kingdom, 3 Lausanne, Switzerland 1 2 The continuing demand for higher bandwidth in serial interconnects has pushed the symbol rate of differential lanes into the high-insertion-loss region of channels. Multi-level signaling such as differential PAM-4 [1] has been used to mitigate the loss of electrical channels by lowering the signal spectrum. Such an approach suffers from lower SNR tolerance as well as higher susceptibility to crosstalk and ISI as compared to differential signaling (DS). Coded differential approaches have been reported [2] to mitigate ISI. Our approach is a generalization of DS in which ternary values are transmitted on an 8-wire bus.

👥 作者与机构

Anant Singh1, Dario Carnelli1, Altay Falay1, Klaas Hofstra1,

分类:Other · 年份:ISSCC 2014