8b Thin-Film Microprocessor Using a Hybrid OxideOrganic Complementary Technology with InkjetPrinted P2ROM Memory

📋 论文概要

该论文提出了一种采用混合氧化物-有机互补薄膜技术实现的8位通用微处理器，并集成了喷墨打印的P2ROM存储器。该工作解决了在柔性基底上实现低成本、低功耗微处理器的挑战，展示了薄膜晶体管技术在逻辑和存储应用中的可行性。

💡 主要创新点

• 首次在混合氧化物-有机互补薄膜技术中实现8位通用微处理器，结合了n型氧化物和p型有机晶体管。
• 集成了喷墨打印的P2ROM存储器，实现了低成本、非易失性存储功能。
• 展示了薄膜晶体管技术在复杂逻辑电路中的应用潜力，为柔性电子系统提供了新方案。

🏷 关键词

📄 原文摘要

Tung Huei Ke1, Soeren Steudel1, Koji Obata3, Marko Marinkovic4, Duy-Vu Pham4, Arne Hoppe4, Aashini Gulati5, Francisco Gonzalez Rodriguez5, Brian Cobb5, Gerwin H. Gelinck5, Jan Genoe1,2, Wim Dehaene1,2, Paul Heremans1,2 imec, Leuven, Belgium, 2KU Leuven, Leuven, Belgium, Panasonic, Osaka, Japan, 4Evonik Industries, Marl, Germany, 5 Holst Centre/TNO, Eindhoven, The Netherlands 1 3 We present an 8b general-purpose microprocessor realized in a hybrid oxideorganic complementary thin-film technology. The n-type transistors are based on a solution-processed n-type metal-oxide semiconductor, and the p-type transistors use an organic semiconductor. As compared to previous work utilizing unipolar logic gates [1], the higher mobility n-type semiconductor and the use of complementary logic allow for a >50x speed improvement. It also adds robustness to the design, which allowed for a more complex and complete

👥 作者与机构

Kris Myny1, Steve Smout1, Maarten Rockelé1,2, Ajay Bhoolokam1,2,