A Transformer-Coupled True-RMS Power Detector in 40nm CMOS

📋 论文概要

本文提出了一种基于变压器耦合的真RMS功率检测器，采用40nm CMOS工艺实现。该检测器能够准确测量RF输出功率，有效克服了传统电压检测器在负载阻抗变化时因VSWR失配导致的测量误差问题。

💡 主要创新点

• 采用变压器耦合结构实现真RMS功率检测，对天线阻抗变化不敏感，提高了功率测量的准确性。
• 全集成于40nm CMOS工艺中，无需外部功率检测器，降低了面积和成本。

🏷 关键词

📄 原文摘要

To optimize the power consumption and system performance of battery-supplied devices, it is required to monitor and adjust the transmitted RF power accurately and continuously. This is typically done by an external power detector (PD), which increases area and cost. On the other hand, fully integrated power detectors are typically voltage-based [1-5] and only give the correct RF output power for a fixed load impedance. But in practice, antenna impedance variations will occur, causing VSWR mismatches that introduce an error in these voltagebased RF output power measurements. This paper presents a 5GHz WLAN PA with an on-chip true-RMS Power Detector, without any additional power loss or area overhead. The power detector is based on a magnetically coupled sense winding and takes advantage of transformer-based power combining and impedance transformation that has become common practice in nanometer CMOS RF PAs. The proposed power

👥 作者与机构

Brecht Francois, Patrick Reynaert

KU Leuven, Leuven, Belgium