A Dual-Mode Transformer-Based Doherty LTE Power Amplifier in 40nm CMOS

📋 论文概要

该论文提出了一种基于变压器的双模式Doherty LTE功率放大器，采用40nm CMOS工艺，旨在解决高数据速率通信系统中功率放大器在宽功率范围内的高效率和高线性度挑战，同时通过串联组合变压器实现瓦特级输出功率。

💡 主要创新点

• 提出双模式操作，结合Doherty架构和变压器组合，在宽功率范围内优化效率和线性度。
• 利用串联组合变压器（SCT）实现高输出功率，克服CMOS低击穿电压的限制。

🏷 关键词

📄 原文摘要

Modern high-data-rate communication systems such as LTE use spectrally efficient modulation schemes with a high peak-to-average power ratio (PAPR), placing stringent linearity demands on the RF power amplifiers (PA). The main challenge for LTE power amplifiers is therefore to achieve high efficiency and high linearity for a wide power range. In addition, delivering Watt-level output power is another challenge for CMOS RF power amplifiers due to the low breakdown voltage of the transistors. Series-combining transformers (SCT) enable high output power levels by summing up the output voltages of low-voltage CMOS power amplifiers [1-4]. This paper presents a 40nm CMOS LTE RF PA with a hybrid series-combining transformer that consists of two Distributed Active Transformers (DAT) with Doherty operation as shown in Fig. 3.4.1. The Doherty combiner demonstrates high efficiency even when only one of four amplifiers is operational. The large

👥 作者与机构

Ercan Kaymaksut, Patrick Reynaert

KU Leuven, Leuven, Belgium