⚡ 本页包含 AI 生成的分析内容,仅供参考
论文提出了一种在22nm CMOS工艺中实现的图形执行核心,采用了自适应时钟、选择性升压和状态保持睡眠等电路技术,实现了从低电压高效运行到高性能需求的动态调整,解决了功耗与性能的平衡问题。
Carlos Tokunaga, Joseph F. Ryan, Charles Augustine, Jaydeep P. Kulkarni, Yi-Chun Shih, Stephen T. Kim, Rinkle Jain, Keith Bowman, Arijit Raychowdhury, Muhammad M. Khellah, James W. Tschanz, Vivek De Intel, Hillsboro, OR The demand for high-performance graphics capability even in extremely power-constrained platforms such as smartphones and tablets requires circuit techniques that scale from efficient operation at low voltage to high performance when needed. It is well known that energy efficiency improves as supply voltage is scaled down, reaching a maximum near the device threshold voltage where switching energy savings from voltage reduction is balanced by increased leakage energy from frequency loss. Achieving this voltage reduction, however, requires techniques that address intrinsic VMIN limitations in arrays (SRAM, register file arrays, ROMs), voltage droop guardband reduction in logic, as well
Featuring Adaptive Clocking, Selective Boosting, and State-Retentive Sleep