A 1/4-inch 8Mpixel CMOS Image Sensor with 3D Backside-Illuminated 1.12µm Pixel with Front-Side Deep-Trench Isolation and Vertical Transfer Gate

📋 论文概要

本文提出了一款1/4英寸8百万像素3D背照式CMOS图像传感器，采用1.12µm像素并引入正面深沟槽隔离技术。解决了小像素尺寸下因光学串扰和电学串扰导致的图像质量下降问题。

💡 主要创新点

• 采用3D背照式（BSI）结构结合正面深沟槽隔离（FS-DTI），有效抑制像素间的串扰，提升量子效率。
• 在1.12µm极小像素尺寸下实现了8百万像素高分辨率，满足高密度集成需求。

🏷 关键词

📄 原文摘要

Bumsuk Kim, Hongki Kim, Jongeun Park, Taesub Jung, Wonje Park, Taeheon Lee, Eunkyung Park, Sangjun Choi, Gyehun Choi, Haeyong Park, Yujung Choi, Seungwook Lee, Yunkyung Kim, Y. Jay Jung, Donghyuk Park, Seungjoo Nah, Youngsun Oh, Mihye Kim, Yooseung Lee, Youngwoo Chung, Ihara Hisanori, Joonhyuk Im, Daniel-KJ Lee, Byunghyun Yim, GiDoo Lee, Heesang Kown, Sungho Choi, Jeonsook Lee, Dongyoung Jang, Youngchan Kim, Tae Chan Kim, Goto Hiroshige, Chi-Young Choi, Duckhyung Lee, GabSoo Han Samsung Electronics, Yongin, Korea According to the trend towards high-resolution CMOS image sensors, pixel sizes are continuously shrinking, towards and below 1.0μm, and sizes are now reaching a technological limit to meet required SNR performance [1-2]. SNR at low-light conditions, which is a key performance metric, is determined by the sensitivity and crosstalk in pixels. To improve sensitivity, pixel technology has

👥 作者与机构

JungChak Ahn, Kyungho Lee, Yitae Kim, Heegeun Jeong,